IS61NSCS25672 Datasheet, PDF (17/32 Pages) Integrated Silicon Solution, Inc – RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM

IS61NSCS25672
IS61NSCS51236
ISSI ^®
CMOS I/O DC Input Characteristics
Symbol Parameter
VCCQ
Min.
VIH
CMOS Input High Voltage
1.8
1.2
1.5
1.0
VIL
CMOS Input Low Voltage
1.8
–0.3
1.5
–0.3
Note:
For devices supplied with CMOS input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.
Typ.
—
—
—
—
Max. Unit
VCCQ + 0.3 V
VCCQ + 0.3
0.6
V
0.5
Undershoot Measurement and Timing
VIH
GND
50%
GND - 1.0V
20% tKC
Overshoot Measurement and Timing
VCC + 1.0V
50%
VCC
VIL
20% tKC
I/O CAPACITANCE (TA = 25 °C, f = 1 MHZ)
Symbol
Parameter
CA
Address
CB
Control
CCK
Clock
Input Capacitance
Input Capacitance
Input Capacitance
CDQ
Data
Output Capacitance
CCQ
CQ Clock
Output Capacitance
Note: These parameters are sampled and not 100% tested.
Test conditions
VIN = 0 V
VIN = 0 V
VIN = 0 V
VOUT = 0 V
VOUT = 0 V
Min.
Max.
Unit
—
3.5
pF
—
3.5
pF
—
3.5
pF
—
4.5
pF
—
4.5
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
17
ADVANCE INFORMATION Rev. 00A
06/19/01