IS61NSCS25672 Datasheet, PDF (19/32 Pages) Integrated Silicon Solution, Inc – RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM

IS61NSCS25672
IS61NSCS51236
ISSI ^®
INPUT AND OUTPUT LEAKAGE CHARACTERISTICS
Symbol
IIL
IINM
IOL
Parameter
Input Leakage Current
(except mode pins)
Mode Pin Input Current
Output Leakage Current
Test Conditions
VIN = 0 to VCC
VCC ≥ VIN ≥ VIL
0V ≤ VIN ≤ VIL
Output Disable,
VOUT = 0 to VCCQ
Min.
–2
–100
–2
–2
Max.
2
2
2
2
Units
µA
µA
µA
SELECTABLE IMPEDANCE OUTPUT DRIVER DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VOHL⁽¹⁾
Low Drive Output High Voltage
VOLL⁽¹⁾
Low Drive Output Low Voltage
VOHH⁽²⁾
High Drive Output High Voltage
VOLH⁽²⁾
High Drive Output Low Voltage
Notes:
1. ZQ = 1; High Impedance output driver setting
2. ZQ = 0; Low Impedance output driver setting
Test Conditions
IOHL = –4 mA
IOLL = 4 mA
IOHH = –8 mA
IOLH = 8 mA
Min.
VCCQ – 0.4
—
VCCQ – 0.4
—
Max.
—
0.4
—
0.4
Units
V
V
V
V
OUTPUT RESISTANCE
Symbol
ROUT
Parameter
Output Resistance
Test Conditions
VOH, VOL = VCCQ/2
ZQ = VIL
VOH, VOL = VCCQ/2
ZQ = VIH
Min.
17
35
Typ.
25
50
Max.
33
65
Units
Ω
Ω
Integrated Silicon Solution, Inc. — 1-800-379-4774
19
ADVANCE INFORMATION Rev. 00A
06/19/01