TC1796 Datasheet, PDF (132/134 Pages) Infineon Technologies AG – 32-Bit Single-Chip Microcontroller TriCore

TC1796
Package and Reliability
5.3
Flash Memory Parameters
The data retention time of the TC1796’s Flash memory (i.e. the time after which stored
data can still be retrieved) depends on the number of times the Flash memory has been
erased and programmed.
Table 36 Flash Parameters
Parameter
Symbol
Min.
Values
Unit Note /
Typ. Max.
Test Condition
Program / Data Flash t_RET CC 20
Retention Time,
Physical Sector¹⁾²⁾
–
–
years Max. 1000
erase/program
cycles
Program / Data Flash t_RETL CC 20
Retention Time
Logical Sector¹⁾²⁾
–
–
years Max. 100
erase/program
cycles
Data Flash
Endurance
(128 KB)
N_E CC 15 000 –
–
–
Max. data retention
time 5 years
Data Flash
Endurance,
N_E8 CC 120 000 –
–
–
Max. data retention
time 5 years
EEPROM Emulation
(8 × 16 KB)
Programming Time
per Page³⁾
t_PR CC –
–
5
ms –
Program Flash
Erase Time
per 256-KB Sector
t_ERP CC –
–
5
s
f_CPU = 150 MHz
Data Flash
Erase Time
per 64-KB Sector
t_ERD CC –
–
2.5 s
f_CPU = 150 MHz
Wake-up time
t_WU CC 4300 × –
–
–
–
1/f_CPU
+ 40µs
1) Storage and inactive time included.
2) At average weighted junction temperature T_j = 100^oC, or
the retention time at average weighted temperature of T_j = 110^oC is minimum 10 years, or
the retention time at average weighted temperature of T_j = 150^oC is minimum 0.7 years.
3) In case the Program Verify feature detects weak bits, these bits will be programmed once more. The
reprogramming takes additional 5 ms.
Data Sheet
132
V1.0, 2008-04