MC9S08DZ60 Datasheet, PDF (380/396 Pages) Freescale Semiconductor, Inc – Microcontrollers

Appendix A Electrical Characteristics
A.13 FLASH and EEPROM
This section provides details about program/erase times and program-erase endurance for the FLASH and
EEPROM memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
NOTE
All values shown in Table A-17 are preliminary and subject to further
characterization.
Table A-17. FLASH and EEPROM Characteristics
Num C
Rating
Symbol
Min
Typical
Max
Unit
1
— Supply voltage for program/erase
V_prog/erase
2.7
5.5
V
Supply voltage for read operation
2
—
0 < f_Bus < 8 MHz
0 < f_Bus < 20 MHz
V_Read
2.7
5.5
V
3
— _{Internal FCLK frequency}¹
f_FCLK
150
200
kHz
4
— Internal FCLK period (1/FCLK)
t_Fcyc
5
6.67
µs
5
— _{Byte program time (random location)}⁽²⁾
t_prog
9
t_Fcyc
6
— _{Byte program time (burst mode)}⁽²⁾
t_Burst
4
t_Fcyc
7
— _{Page erase time}²
t_Page
4000
t_Fcyc
8
— _{Mass erase time}⁽²⁾
t_Mass
20,000
t_Fcyc
FLASH Program/erase endurance³
9
C
T_L to T_H = –40°C to + 125°C
T = 25°C
n_FLPE
10,000
—
100,000
—
cycles
EEPROM Program/erase endurance³
10
C
T_L to T_H = –40°C to + 0°C
T_L to T_H = 0°C to + 125°C
T = 25°C
10,000
—
n_EEPE
TBD
—
300,000
—
cycles
11
C _{Data retention}⁴
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for}
calculating approximate time to program and erase.
3 _{Typical endurance for FLASH and EEPROM is based on the intrinsic bitcell performance. For additional information on how}
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for
Nonvolatile Memory.
4 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated}
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
MC9S08DZ60 Series Data Sheet, Rev. 1 Draft E
380
PRELIMINARY
Freescale Semiconductor
Subject to Change