MC9S08DZ60 Datasheet, PDF (360/396 Pages) Freescale Semiconductor, Inc – Microcontrollers

Appendix A Electrical Characteristics
Table A-5. ESD and Latch-Up Protection Characteristics
Num
Rating
1 Human Body Model (HBM)
2 Charge Device Model (CDM)
3 Latch-up Current at T_A = 125°C
Symbol
V_HBM
V_CDM
I_LAT
Min
+/- 2000
+/- 500
+/- 100
Max
–
–
–
Unit
V
V
mA
A.6 DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table A-6. DC Characteristics
Num C
Characteristic
Symbol
Condition
Min
Typ¹
Max Unit
1 — Operating Voltage
V_DD
2.7
—
2 _{P Output high}
voltage
3
All I/O pins,
5 V, I_Load = –2 mA V_DD – 1.5 —
low-drive strength
3 V, I_Load = –0.6 mA V_DD – 1.5 —
5 V, I_Load = –0.4 mA V_DD – 0.8 —
3 V, I_Load = –0.24 mA V_DD – 0.8 —
All I/O pins, ^VOH 5 V, I_Load = –10 mA V_DD – 1.5
—
high-drive strength
3 V, I_Load = –3 mA V_DD – 1.5 —
5 V, I_Load = –2 mA V_DD – 0.8 —
3 V, I_Load = –0.4 mA V_DD – 0.8 —
4
P
Output high
current
Max total I_OH for all ports _IOHT
5V
3V
—
—
—
—
5.5
V
—
—
—
—
—
V
—
—
—
100
60
mA
Output low
voltage
5P
All I/O pins,
5 V, I_Load = 2 mA
—
low-drive strength
3 V, I_Load = 0.6 mA
—
5 V, I_Load = 0.4 mA
—
3 V, I_Load = 0.24 mA
—
All I/O pins, ^VOL
5 V, I_Load = 10 mA
—
high-drive strength
3 V, I_Load = 3 mA
—
5 V, I_Load = 2 mA
—
3 V, I_Load = 0.4 mA
—
6
C
Output low
current
Max total I_OL for all ports _IOLT
5V
3V
—
—
—
1.5
—
1.5
—
0.8
—
0.8
—
1.5
V
—
1.5
—
0.8
—
0.8
—
—
100
60
mA
7 C Input high voltage; all digital inputs
V_IH
8 C Input low voltage; all digital inputs
V_IL
0.65 x V_DD —
—
—
— 0.35 x V_DD ^V
9 C Input hysteresis
V_hys
0.06 x V_DD
mV
10
P
Input leakage current (Per pin)
V_In = V_DD or V_SS, all input only pins
|I_In|
—
0.1
1
µA
11
P
Hi-Z (off-state) leakage current (per pin)
V_In = V_DD or V_SS, all input/output
|I_OZ|
—
0.1
1
µA
Pullup/pulldown currents; all digital
12 P _{inputs, when enabled}
I_PU, I_PD
5V
3V
77
110
250
46
67
150
µA
MC9S08DZ60 Series Data Sheet, Rev. 1 Draft E
360
PRELIMINARY
Freescale Semiconductor
Subject to Change