MSC8112 Datasheet, PDF (14/44 Pages) Freescale Semiconductor, Inc – Dual Core Digital Signal Processor

Electrical Characteristics
2.2 Recommended Operating Conditions
Table 3 lists recommended operating conditions. Proper device operation outside of these conditions is not guaranteed.
Table 3. Recommended Operating Conditions
Rating
Core and PLL supply voltage:
I/O supply voltage
Input voltage
Operating temperature range:
Symbol
V_DD
V_CCSYN
V_DDH
V_IN
T_J
Value
1.07 to 1.13
3.135 to 3.465
–0.2 to V_DDH+0.2
–40 to 105
Unit
V
V
V
°C
2.3 Thermal Characteristics
Table 4 describes thermal characteristics of the MSC8112 for the FC-PBGA packages.
Table 4. Thermal Characteristics for the MSC8112
Characteristic
Symbol
FC-PBGA
20 × 20 mm⁵
Unit
Natural
200 ft/min
Convection
(1 m/s) airflow
Junction-to-ambient^{1, 2}
Junction-to-ambient, four-layer board^{1, 3}
Junction-to-board (bottom)⁴
Junction-to-case⁵
Junction-to-package-top⁶
R_θJA
26
R_θJA
19
R_θJB
9
R_θJC
0.9
Ψ_JT
1
21
°C/W
15
°C/W
°C/W
°C/W
°C/W
Notes: 1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
2. Per SEMI G38-87 and JEDEC JESD51-2 with the single layer board horizontal.
3. Per JEDEC JESD51-6 with the board horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD 51-8. Board temperature is measured on
the top surface of the board near the package.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method
1012.1).
6. Thermal characterization parameter indicating the temperature difference between package top and the junction temperature
per JEDEC JESD51-2.
Section 4.5, Thermal Considerations provides a detailed explanation of these characteristics.
2.4 DC Electrical Characteristics
This section describes the DC electrical characteristics for the MSC8112. The measurements in Table 5 assume the following
system conditions:
• T_A = 25 °C
• V_DD = 1.1 V nominal = 1.07–1.13 V_DC
• V_DDH = 3.3 V ± 5% V_DC
• GND = 0 V_DC
Note: The leakage current is measured for nominal V_DDH and V_DD.
MSC8112 Dual Core Digital Signal Processor Data Sheet, Rev. 0
14
Freescale Semiconductor