TIC10024-Q1 Datasheet, PDF (7/81 Pages) Texas Instruments – 24-Input Multiple Switch Detection Interface (MSDI) Device With Adjustable Wetting Current for Automotive Systems

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TIC10024-Q1
SCPS268 – SEPTEMBER 2017
Electrical Characteristics (continued)
over operating free-air temperature range, V_S = 4.5 V to 35 V, and V_DD = 3 V to 5.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
WETTING CURRENT ACCURACY (DIGITAL SWITCHES, MAXIMUM RESISTANCE VALUE WITH SWITCH CLOSED ≤ 100Ω , MINIMUM RESISTANCE
VALUE WITH SWITCH OPEN ≥ 5000 Ω)
1 mA setting
2 mA setting
4.5 V ≤ V_S ≤ 35 V
0.84
1
1.14
1.71
2
2.32
I_WETT (CSO)
Wetting current
accuracy for CSO
(switch closed)
5 mA setting
10 mA setting
15 mA setting
1 mA setting
4.5 V ≤ V_S < 5 V
5 V ≤ V_S ≤ 35 V
4.5 V ≤ V_S < 6 V
6 V ≤ V_S ≤ 35 V
4.5 V ≤ V_S < 6.5 V
6.5 V ≤ V_S ≤ 35 V
2.39
5.5
4.3
5
5.6
mA
2.4
11
8.4
10
11.4
2.4
16.5
12.5
15
17
0.75
1.1
2.05
I_WETT (CSI)
V_{CSI_DROP_OPEN}
Wetting current
accuracy for CSI
(switch closed)
Voltage drop from IN_x
pin to AGND across
CSI (switch open)
2 mA setting
5 mA setting
10 mA setting
15 mA setting
10 mA setting,
R_SW= 5kΩ
15 mA setting,
R_SW= 5kΩ
2mA setting, I_IN=
1mA (4.5V ≤ VS ≤
35V)
4.5 V ≤ V_S ≤ 35 V
4.5 V ≤ V_S < 6 V
6 V ≤ V_S ≤ 35V
4.5 V ≤ V_S ≤ 35V
1.6
2.2
3.3
4.3
5.6
7.1
mA
9.2
11.5
13.4
11
16.5
19.2
13.7
16.5
19.2
1.7
V
1.7
1.2 V
V_{CSI_DROP_CLOSED}
Voltage drop from
INx pin to ground
across CSI (switch
closed)
5mA setting, I_IN=
1mA or 2mA
10mA setting, I_IN=
1mA, 2mA, or
5mA
4.5 V ≤ V_S ≤ 35V
1.3 V
1.5 V
15mA setting, I_IN=
1mA, 2mA, 5mA,
or 10mA
2.1 V
LEAKAGE CURRENTS
I_{IN_LEAK_OFF}
I_{IN_LEAK_OFF_25}
I_{IN_LEAK_0mA}
Leakage current at
input INx when
channel is disabled
Leakage current at
input INx when
wetting current
setting is 0mA
0 V ≤ V_INx ≤ V_S , channel disabled (EN_INx register bit= logic 0)
0 V ≤ V_INx ≤ V_S , channel disabled (EN_INx register bit= logic 0),
T_A = 25°C
0 V ≤ V_INx ≤ 6 V, 6 V ≤ V_S ≤ 35 V , I_WETT setting = 0 mA
-4
-0.5
-110
5.3
µA
0.5
µA
110
µA
I_{IN_LEAK_LOSS_OF_GND}
Leakage current at
input INx under loss
of GND condition
V_S = 24 V, 0 V ≤ V_INx ≤ 24 V, all grounds (AGND, DGND, and EP)
= 24 V, V_DD shorted to the grounds⁽¹⁾
-5
µA
I_{IN_LEAK_LOSS_OF_VS}
LOGIC LEVELS
Leakage current at
input INx under loss
of V_S condition
0 V ≤ V_INx ≤ 24 V, V_S shorted to the grounds = 0 V, V_DD = 0 V
5 µA
V_{/INT_L}
V_{SO_L}
INT output low
voltage
SO output low
voltage
I_/INT = 2 mA
I_/INT = 4 mA
I_SO = 2 mA
0.35
V
0.6
0.2V_DD
V
V_{SO_H}
SO output high
voltage
I_SO = -2 mA
0.8V_DD
V
V_{IN_L}
SI, SCLK, and CS
input low voltage
0.3V_DD
V
V_{IN_H}
SI, SCLK, and CS
input high voltage
0.7V_DD
V
V_{RESET_L}
RESET input low
voltage
0.8 V
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