SM470R1B1M-HT Datasheet, PDF (22/67 Pages) Texas Instruments – 16/32-BIT RISC FLASH MICROCONTROLLER

SM470R1B1M-HT
SPNS155F – SEPTEMBER 2009 – REVISED AUGUST 2012
www.ti.com
flash program and erase
The B1M device flash contains two 512K-byte memory arrays (or banks), for a total of 1M-byte of flash, and
consists of sixteen sectors. These sixteen sectors are sized as follows:
SECTOR
NO.
OTP
0
1
2
3
4
5
6
7
SEGMENT
2K Bytes
64K Bytes
64K Bytes
64K Bytes
64K Bytes
64K Bytes
64K Bytes
64K Bytes
64K Bytes
LOW ADDRESS
0x0000_0000
0x0000_0000
0x0001_0000
0x0002_0000
0x0003_0000
0x0004_0000
0x0005_0000
0x0006_0000
0x0007_0000
HIGH ADDRESS
0x0000_007FF
0x0000_FFFF
0x0001_FFFF
0x0002_FFFF
0x0003_FFFF
0x0004_FFFF
0x0005_FFFF
0x0006_FFFF
0x0007_FFFF
MEMORY ARRAYS
(OR BANKS)
BANK0
(512K Bytes)
0
64K Bytes
0x0008_0000
1
64K Bytes
0x0009_0000
2
64K Bytes
0x000A_0000
3
64K Bytes
0x000B_0000
4
64K Bytes
0x000C_0000
5
64K Bytes
0x000D_0000
6
64K Bytes
0x000E_0000
7
64K Bytes
0x000F_0000
0x0008_FFFF
0x0009_FFFF
0x000A_FFFF
0x000B_FFFF
0x000C_FFFF
0x000D_FFFF
0x000E_FFFF
0x000F_FFFF
BANK1
(512K Bytes)
The minimum size for an erase operation is one sector. The maximum size for a program operation is one 16-bit
word.
NOTE
The flash external pump voltage (V_CCP) is required for all operations (program, erase, and
read).
Execution can occur from one bank while programming/erasing any or all sectors of another bank. However,
execution cannot occur from any sector within a bank that is being programmed or erased.
NOTE
When the OTP sector is enabled, the rest of flash memory is disabled. The OTP memory
can only be read or programmed from code executed out of RAM.
HET RAM
The B1M device contains HET RAM. The HET RAM has a 64-instruction capability. The HET RAM is
configurable by the SYS module to be addressed within the range of 0x0000_0000 to 0xFFE0_0000. The HET
RAM is addressed through memory select 4.
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