K4S643232C Datasheet, PDF (6/43 Pages) Samsung semiconductor – 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232C
CMOS SDRAM
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high voltage
VIH
2.0
3.0
VDDQ+0.3
V
Input logic low voltage
VIL
-0.3
0
0.8
V
Output logic high voltage
VOH
2.4
-
-
V
Output logic low voltage
VOL
-
-
0.4
V
Input leakage current
ILI
-10
-
10
uA
Note
4
1
2
IOH = -2mA
IOL = 2mA
3
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. The VDD condition of K4S643232C-55/60 is 3.135V~3.6V.
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
CAS
Latency _-55
Operating current
(One bank active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
Io = 0 mA
3
140
2
-
Precharge standby current
in power-down mode
ICC2P CKE ≤ VIL(max), tCC = 15ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
Precharge standby current
in non power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Active standby current in
power-down mode
ICC3P CKE ≤ VIL(max), tCC = 15ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Operating current
(Burst mode)
Io = 0 mA
ICC4 Page burst
2 Banks activated
3
220
2
-
Refresh current
ICC5 tRC ≥ tRC(min)
3
200
2
-
Self refresh current
ICC6 CKE ≤ 0.2V
Notes : 1. Unless otherwise notes, Input level is CMOS(VIH/VIL=VDDQ/VSSQ) in LVTTL.
2. Measured with outputs open.
3. Refresh period is 64ms.
4. K4S643232C-TC**
5. K4S643232C-TL**
Version
-60 -70 -80
140 130 130
-
- 130
2
2
20
10
3
3
30
20
200 180 150
-
- 130
200 180 160
-
- 160
2
450
Unit Note
-10
115
mA 2
115
mA
mA
mA
mA
mA
mA
130
mA 2
110
150
mA 3
150
mA 4
uA 5
-6-
REV. 1.1 Nov. '99