K4S643232C Datasheet, PDF (40/43 Pages) Samsung semiconductor – 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232C
Active/Precharge Power Down Mode @CAS Latency=2, Burst Length=4
CMOS SDRAM
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
tSS
*Note 1
*Note 2
*Note 3
tSS
tSS
*Note 2
CS
RAS
CAS
ADDR
Ra
Ca
BA
A10/AP
DQ
WE
Ra
tSHZ
Qa0 Qa1 Qa2
DQM
Precharge
Power-down
Entry
Row Active
Read
Precharge
Power-down
Exit
Active
Power-down
Entry
Active
Power-down
Exit
Precharge
: Don ¡Ç t Care
*Note :
1. Both banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + tss prior to Row active command.
3. Can not violate minimum refresh specification. (64ms)
- 40
REV. 1.1 Nov. '99