K4E661612B Datasheet, PDF (5/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
CAPACITANCE (TA=25°C, VCC=3.3V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [A0 ~ A12]
CIN1
-
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
Output capacitance [DQ0 - DQ15]
CDQ
-
CMOS DRAM
Max
Units
5
pF
7
pF
7
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
Min Max
Random read or write cycle time
tRC
74
Read-modify-write cycle time
Access time from RAS
tRWC
tRAC
101
45
Access time from CAS
tCAC
12
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
tAA
tCLZ
tCEZ
23
3
3
13
OE to output in Low-Z
tOLZ
3
Transition time (rise and fall)
RAS precharge time
tT
1
50
tRP
25
RAS pulse width
tRAS
45 10K
RAS hold time
CAS hold time
CAS pulse width
tRSH
tCSH
tCAS
8
35
7
5K
RAS to CAS delay time
tRCD
11 33
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
tRAD
tCRP
tASR
9
22
5
0
Row address hold time
tRAH
7
Column address set-up time
Column address hold time
Column address to RAS lead time
tASC
0
tCAH
7
tRAL
23
Read command set-up time
tRCS
0
Read command hold time referenced to CAS
tRCH
0
Read command hold time referenced to RAS
tRRH
0
Write command hold time
tWCH
7
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
tWP
6
tRWL
8
tCWL
7
tDS
0
-50
Min Max
84
113
50
13
25
3
3 13
3
1 50
30
50 10K
8
38
8 10K
11 37
9 25
5
0
7
0
7
25
0
0
0
7
7
8
7
0
-60
Min Max
104
138
60
15
30
3
3 13
3
1 50
40
60 10K
10
40
10 10K
14 45
12 30
5
0
10
0
10
30
0
0
0
10
10
10
10
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
3,4,10
3,4,5
3,10
3
6,21
3
2
4
10
13
13
8
8
16
9,19