K4E661612B Datasheet, PDF (27/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
tRASP
¡ó
tRHCP
VIH -
UCAS
VIL -
tCRP
tRCD
tHPC
tCP
tCAS
tHPC
tCP
tCAS
¡ó
tRSH
tCAS
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCRP
tASR
tRAD
tRAH
tCSH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tRAL
tASC tCAH
tASC tCAH
¡ó
COLUMN
COLUMN
ADDRESS
ADDRESS
¡ó
VIH -
W
VIL -
tWCS tWCH
tWP
tWCS
tWCH
tWP
¡ó
tWCS tWCH
tWP
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tDS tDH
VALID
DATA-IN
¡ó
¡ó
¡ó
¡ó
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tDS tDH
VALID
DATA-IN
tRP
tRPC
Don′t care
Undefined