 English |
|
|
|
|
|
|
|
| K4E661612B Datasheet, PDF (35/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out | |||
| |||
| ◁ |
K4E661612B, K4E641612B
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE , A = Donâ²t care
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
tRP
tRPC
tCP
tCSR
tCP
tCSR
tRASS
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
VIH -
W
VIL -
tCEZ
tWRP
tWRH
OPEN
OPEN
TEST MODE IN CYCLE
NOTE : OE , A = Donâ²t care
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
tRP
tRPC
tCP
tCSR
tCP
tCSR
tRC
tRAS
tCHR
tCHR
VIL -
W
VIH -
DQ0 ~ DQ15
VOH -
VOL -
tWTS
tWTH
tCEZ
OPEN
CMOS DRAM
tRPS
tRPC
tCHS
tCHS
tRP
tRPC
Donâ²t care
Undefined
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese