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| K4E661612B Datasheet, PDF (10/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out | |||
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K4E661612B, K4E641612B
WORD READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tRC
tRAS
tCRP
tRCD
tCSH
tRSH
tCAS
tCRP
tRCD
tCSH
tRSH
tCAS
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tRCS
tCAH
COLUMN
ADDRESS
tRAL
tRP
tCRP
tCRP
tRRH
tRCH
tRAC
OPEN
tRAC
OPEN
tAA
tOLZ
tOEA
tCAC
tCLZ
tCAC
tCLZ
tOEZ
DATA-OUT
tOEZ
DATA-OUT
tCEZ
tCEZ
Donâ²t care
Undefined
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