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K4E661612B Datasheet, PDF (32/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661612B, K4E641612B
RAS - ONLY REFRESH CYCLE
NOTE : W, OE , DIN = Don′t care
DOUT = OPEN
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCRP
tCRP
tASR tRAH
ROW
ADDR
tRC
tRAS
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE, A = Don′t care
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
VIH -
W
VIL -
tRP
tRPC
tCP
tCSR
tCP
tCSR
tCEZ
tCHR
tCHR
tWRP
tWRH
tRC
tRAS
OPEN
OPEN
CMOS DRAM
tRP
tRPC
tRP
tRPC
Don′t care
Undefined