K4E661612B Datasheet, PDF (4/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
ICC1
Don′t care
Speed
-45
-50
-60
K4E661612B
100
90
80
Max
ICC2
Normal
L
Don′t care
2
2
-45
100
ICC3
Don′t care
-50
90
-60
80
-45
110
ICC4
Don′t care
-50
100
-60
90
ICC5
Normal
L
Don′t care
500
300
-45
100
ICC6
Don′t care
-50
90
-60
80
ICC7
L
Don′t care
400
ICCS
L
Don′t care
400
K4E641612B
130
120
110
2
2
130
120
110
120
110
100
500
300
130
120
110
400
400
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
mA
mA
mA
uA
uA
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V
W, OE=VIH, Address=Don′t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.