K4E661612B Datasheet, PDF (31/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
HYPER PAGE READ AND WRITE MIXED CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
DQ8 ~ DQ15
VI/OH -
VI/OL -
READ(tCAC)
tRASP
READ(tCPA)
WRITE
tRCD
tCAS
tRAD
tASR
tRAH
tASC
tCAS
tCAH
ROW
ADDR
COLUMN
ADDRESS
tHPC
tCP
tCAS
tHPC
tCP
tCAS
tASC
COLUMN
ADDRESS
tCAH
tHPC
tCP
tCAS
tHPC
tCP
tCAS
tCAH
tASC
COL.
ADDR
tRCS
tRCH tRCS
tRCH
tWCH
tWCS
READ(tAA)
tRHCP
tHPC
tCP
tCAS
tHPC
tCP
tCAS
tASC tCAH
COL.
ADDR
tRAL
tWPE
tCPA
tCLZ
tWED
tRP
tRCH
tOEA
tCAC
tAA
tRAC
tWEZ
VALID
DATA-OUT
tOEA
tCAC
tAA
tRAC
tWEZ
VALID
DATA-OUT
tWEZ
tDH
tDS
VALID
DATA-OUT
tWEZ
VALID
DATA-IN
tDH
tDS
VALID
DATA-OUT
VALID
DATA-IN
tAA
tREZ
VALID
DATA-OUT
tAA
tREZ
VALID
DATA-OUT
Don′t care
Undefined