K4E661612B Datasheet, PDF (19/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
WORD READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
DQ8 ~ DQ15
VI/OH -
VI/OL -
tRWC
tRAS
tRP
tCRP
tRCD
tRSH
tCAS
tCRP
tRCD
tRAD
tASR tRAH
ROW
ADDR.
tASC tCAH
COLUMN
ADDRESS
tRSH
tCAS
tCSH
tAWD
tCWD
tRWD
tOEA
tRWL
tCWL
tWP
tOLZ
tCLZ
tCAC
tAA
tRAC
tOLZ
tCLZ
tCAC
tAA
tRAC
tOED
tOEZ
VALID
DATA-OUT
tOED
tOEZ
VALID
DATA-OUT
tDS tDH
VALID
DATA-IN
tDS tDH
VALID
DATA-IN
Don′t care
Undefined