K4E661612B Datasheet, PDF (23/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
HYPER PAGE MODE LOWER BYTE READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
tRASP
tRP
¡ó
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tCRP
tRPC
tCSH
tRCD
tCAS
tHPC
tCP
tCAS
tHPC
tCP
tCAS
tRHCP
tHPC
tCP
tCAS
tREZ
tASR
tRAD
tRAH tASC
tCAH tASC tCAH tASC
tCAH tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDR
COLUMN
ADDRESS
tRCS
tRAL
tRCH
tRRH
tAA
tOEA
tAA
tCPA
tCAC
tOCH
tCAC
tAA
tCPA
tOEA
tCAC
tRAC
tDOH
tOLZ
tCLZ
VALID
DATA-OUT
tOEP
tOEZ
VALID
DATA-OUT
VALID
DATA-OUT
OPEN
tCPA
tCAC
tAA
tCHO
tOEP
tOEZ
VALID
DATA-OUT
tOEZ
VALID
DATA-OUT
Don′t care
Undefined