K4E661612B Datasheet, PDF(21/36 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

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K4E661612B Datasheet, PDF (21/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

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K4E661612B, K4E641612B

UPPER-BYTE READ - MODIFY - WRITE CYCLE

CMOS DRAM

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

VIL -

VIH -

VIL -

VIH -

VIL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

VI/OH -

VI/OL -

tRAS

tRWC

tCRP

tRCD

tRSH

tCAS

tCRP

tRAD

tASR tRAH

ROW

ADDR

tASC tCAH

COLUMN

ADDRESS

tCSH

tAWD

tCWD

tRWD

tOEA

tRP

tRPC

tRWL

tCWL

tWP

OPEN

tOLZ

tCLZ

tCAC

tAA

tRAC

tOED

tOEZ

VALID

DATA-OUT

tDS tDH

VALID

DATA-IN

Donâ²t care

Undefined

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