K4E661612B Datasheet, PDF (28/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
tRASP
tRP
tCSH
tHPRWC
tCRP
VIH -
UCAS
VIL -
tCRP
VIH -
LCAS
VIL -
tRCD
tRCD
tRAD
tRAH
VIH -
A
VIL -
tASR
tASC
ROW
ADDR
COL.
ADDR
tRCS
tCAS
tCAS
tCAH
tCWL
tRSH
tCP
tCAS
tCP
tCAS
tASC
tCAH
COL.
ADDR
tRCS
tRAL
tRWL
tCWL
tCRP
tCRP
VIH -
W
VIL -
tWP
tCWD
tAWD
tRWD
tWP
tCWD
tAWD
tCPWD
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
tOEA
tOEA
tCAC
tAA
tRAC
tOED
tOEZ
tDH
tDS
tCAC
tAA
tOED
tOEZ
tDH
tDS
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
DQ8 ~ DQ15
VI/OH -
VI/OL -
tCAC
tAA
tRAC
tOED
tOEZ
tDH
tDS
tCAC
tAA
tOED
tOEZ
tDH
tDS
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined