K4E661612B Datasheet, PDF (33/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
HIDDEN REFRESH CYCLE ( READ )
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tCRP
tRC
tRAS
tRP
tRC
tRP
tRAS
tRCD
tRSH
tCHR
tCRP
tRCD
tRSH
tRAD
tASR tRAH tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tRCS
tRAL
tAA
tOEA
OPEN
tCLZ
tRAC
tCAC
tOLZ
tCHR
tWRH
tWEZ
tOEZ
DATA-OUT
tCEZ
tREZ
OPEN
DATAD-IANTA-OUT
Don′t care
Undefined
* In Hidden refresh cycle of 64Mb A-die & B-die, when CAS signal transits from Low to High, the valid data may be cut off.