 English |
|
|
|
|
|
|
|
| K4E661612B Datasheet, PDF (34/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out | |||
| |||
| ◁ |
K4E661612B, K4E641612B
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tCRP
tRC
tRAS
tRP
tRC
tRP
tRAS
tRCD
tRSH
tCHR
tCRP
tRCD
tRSH
tRAD
tASR
tRAH
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tWCS
tWCH
tWP
tCHR
tWRH
tWRP
tDS
tDH
DATA-IN
tDS
tDH
DATA-IN
Donâ²t care
Undefined
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese