K4E661612B Datasheet, PDF (2/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
PIN CONFIGURATION (Top Views)
• K4E661612B-T
• K4E641612B-T
VCC 1
DQ0 2
DQ1 3
DQ2 4
DQ3 5
VCC 6
DQ4 7
DQ5 8
DQ6 9
DQ7 10
N.C 11
VCC 12
W 13
RAS 14
N.C 15
N.C 16
N.C 17
N.C 18
A0 19
A1 20
A2 21
A3 22
A4 23
A5 24
VCC 25
50 VSS
49 DQ15
48 DQ14
47 DQ13
46 DQ12
45 VSS
44 DQ11
43 DQ10
42 DQ9
41 DQ8
40 N.C
39 VSS
38 LCAS
37 UCAS
36 OE
35 N.C
34 N.C
33 A12(N.C)*
32 A11
31 A10
30 A9
29 A8
28 A7
27 A6
26 VSS
(400mil TSOP(II))
*(N.C) : N.C for 4K Refresh Product
Pin Name
A0 - A12
A0 - A11
DQ0 - 15
VSS
RAS
UCAS
LCAS
W
OE
VCC
N.C
Pin function
Address Inputs(8K Product)
Address Inputs(4K Product)
Data In/Out
Ground
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Read/Write Input
Data Output Enable
Power(+3.3V)
No Connection
CMOS DRAM