K4E661612B Datasheet, PDF (24/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
HYPER PAGE MODE UPPER BYTE READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
tCRP
tRASP
tCSH
tRCD
tHPC
tCP
tCAS
¡ó
tHPC
tCP
tCAS
tHPC
tCP
tCAS
tRHCP
tCAS
tRP
tRPC
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCRP
tASR
tRAD
tRAH tASC
tCAH tASC
tCAH
tASC
tCAH
ROW
ADDR.
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDR.
tASC tCAH
COLUMN
ADDRESS
tRPC
tREZ
VIH -
W
VIL -
VIH -
OE
VIL -
tRCS
tAA
tCPA
tCAC
tOEA
tCAC
tAA
tCPA
tOCH
tOEA
tRAL
tRCH
tRRH
tCPA
tCAC
tAA
tCHO
tOEP
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
OPEN
tCAC
tRAC
tDOH
tOLZ
tCLZ
VALID
DATA-OUT
tOEP
tOEZ
VALID
DATA-OUT
VALID
DATA-OUT
tOEZ
VALID
DATA-OUT
tOEZ
VALID
DATA-OUT
Don′t care
Undefined