K4E661612B Datasheet, PDF(12/36 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

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K4E661612B Datasheet, PDF (12/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

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K4E661612B, K4E641612B

UPPER BYTE READ CYCLE

NOTE : DIN = OPEN

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

VIL -

VIH -

VIL -

VIH -

VIL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

VOH -

VOL -

tRC

tRAS

tCRP

tRCD

tCSH

tRSH

tCAS

tCRP

tRAD

tASR tRAH

ROW

ADDRESS

tASC

tRCS

tCAH

COLUMN

ADDRESS

tRAL

tRAC

OPEN

tAA

tOEA

tOLZ

OPEN

tCAC

tCLZ

CMOS DRAM

tRP

tCRP

tRPC

tRRH

tRCH

tCEZ

tOEZ

DATA-OUT

Donâ²t care

Undefined

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