K4E661612B Datasheet, PDF (25/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tRASP
¡ó
tRHCP
tCRP
tRCD
tHPC
tCP
tCAS
tHPC
tCP
tCAS
tRSH
tCAS
tCRP
tRCD
tHPC
tCP
tCAS
¡ó
tHPC
tCP
tCAS
tRSH
tCAS
tASR
tRAD
tRAH
tCSH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
¡ó
tASC tCAH
COLUMN
ADDRESS
tRAL
tASC tCAH
¡ó
COLUMN
ADDRESS
¡ó
VIH -
W
VIL -
tWCS tWCH
tWP
tWCS
tWCH
tWP
¡ó
tWCS tWCH
tWP
tRP
tCRP
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tDS
tDH
VALID
DATA-IN
tDS
tDH
VALID
DATA-IN
¡ó
¡ó
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tDS tDH
VALID
DATA-IN
tDS tDH
VALID
DATA-IN
Don′t care
Undefined