K4E661612B Datasheet, PDF (26/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
tRASP
¡ó
tRHCP
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCRP
tCRP
tRCD
tHPC
tCP
tCAS
tHPC
tCP
tCAS
tRSH
tCAS
tASR
tRAD
tRAH
tCSH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
¡ó
tRAL
tASC tCAH
tASC tCAH
¡ó
COLUMN
COLUMN
ADDRESS
ADDRESS
¡ó
VIH -
W
VIL -
tWCS tWCH
tWP
tWCS
tWCH
tWP
¡ó
tWCS tWCH
tWP
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tDS tDH
VALID
DATA-IN
¡ó
¡ó
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tDS tDH
VALID
DATA-IN
tRP
tRPC
Don′t care
Undefined