K4E661612B Datasheet, PDF (15/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661612B, K4E641612B
UPPER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tCRP
tCRP
tRC
tRAS
tRCD
tCSH
tRSH
tCAS
tASR
tRAD
tRAH tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tRAL
tWCS
tWCH
tWP
tDS
tDH
DATA-IN
CMOS DRAM
tRP
tCRP
Don′t care
Undefined