K5A3X40YTC Datasheet, PDF(40/45 Page) Samsung semiconductor – Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

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K5A3X40YTC Datasheet, PDF (40/45 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

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K5A3x40YT(B)C

Flash SWITCHING WAVEFORMS

Block Group Protect & Unprotect Operations

VID

RESET

BGA,A6

A1,A0

Vss,VIL,

or VIH

DATA

CEF

Valid

Block Group Protect / Unprotect

60H

1Âµs

60H

Block Group Protect:150Âµs

Block Group UnProtect:15ms

Valid

Verify

40H

Preliminary

MCP MEMORY

Vss,VIL,

or VIH

Valid

Status*

RY/BY

tRB

tBUSY

NOTES: Block Group Protect (A6=VIL , A1=VIH , A0=VIL) , Status=01H

Block Group Unprotect (A6=VIH , A1=VIH, A0=VIL) , Status=00H

BGA = Block Group Address (A12 ~ A20)

Temporary Block Group Unprotect

VID

RESET

Vss,VIL,

or VIH

Vss,VIL,

or VIH

CEF

RY/BY

tVID

tRSP

Program or Erase Command Sequence

tRRB tVID

- 40 -

Revision 0.0

November 2002

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