K5A3X40YTC Datasheet, PDF (14/45 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

K5A3x40YT(B)C
Preliminary
MCP MEMORY
WE
A20∼A0(x16)/
A20∼A-1(x8)
DQ15-DQ0
RY/BY
555H/
AAAH
2AAH/
555H
555H/
AAAH
555H/
AAAH
2AAH/
555H
Block
Address
AAH
55H
80H
AAH
55H
30H
Block Erase
Start
Figure 6. Block Erase Command Sequence
Erase Suspend / Resume
The Erase Suspend command interrupts the Block Erase to read or program data in a block that is not being erased. The Erase Sus-
pend command is only valid during the Block Erase operation including the time window of 50 us. The Erase Suspend command is
not valid while the Chip Erase or the Internal Program Routine sequence is running.
When the Erase Suspend command is written during a Block Erase operation, the device requires a maximum of 20 us to suspend
the erase operation. But, when the Erase Suspend command is written during the block erase time window (50 us) , the device
immediately terminates the block erase time window and suspends the erase operation.
After the erase operation has been suspended, the device is availble for reading or programming data in a block that is not being
erased. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode.
When the Erase Resume command is executed, the Block Erase operation will resume. When the Erase Suspend or Erase Resume
command is executed, the addresses are in Don't Care state.
WE
A20∼A0(x16)/
A20∼A-1(x8)
DQ15-DQ0
555H/
AAAH
Block
Address
XXXH
XXXH
AAH
30H
Block Erase
Command Sequence _{Block Erase}
Start
B0H
Erase
Suspend
30H
Erase
Resume
Figure 7. Erase Suspend/Resume Command Sequence
- 14 -
Revision 0.0
November 2002