K5T6432YT Datasheet, PDF (4/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
Flash Memory Part
MCP MEMORY
A21
A20
A19
A18
A17
A16
Address
Input
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
X-decorder
Y-Decorder
128-word Page Buffer
Main Block 134 32K-word
Bank4
56 blocks
Main Block 79 32K-word
Main Block 78 32K-word
Bank3
56 blocks
Main Block 23 32K-word
Main Block 22 32K-word
Bank2
8 blocks
Bank1
15 blocks
Main Block 15 32K-word
Main Block 14 32K-word
Main Block 8 32K-word
Parameter Block 7 4K-word
Parameter Block 2 4K-word
Boot Block 1 4K-word
Bppt Block 0 4K-word
F-Vcc
Vss
Y-Gate / Sense Amp.
Status/ ID Register
Chip Enable F-CE
Output Enable OE
Write Enable WE
Write Protect F-WP
Reset _F-RP
/PowerDown
Command
User
Interface
Write
State
Machine
Multi Plexer
I/O Buffer
DQ15 DQ14
Data I/O
DQ1 DQ0
FUNCTIONAL BLOCK DIAGRAM (64Mbit Flash Memory)
-4-
Revision 1.0
November 2001