K5T6432YT Datasheet, PDF (20/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
F-Vcc Power up / dowm Timing
3.0V
VCC
Vss
VIH
F-RP
VIL
Read /Write Inhibit
tVCS
VIH
F-CE
VIL
tPS
VIH
WE
VIL
MCP MEMORY
Read /Write Inhibit
Read /Write Inhibit
tPS
AC Waveforms for Read Operation and Test Conditions
VIH
Address
VIL
VIH
F-CE
VIL
VIH
OE
VIL
VIH
WE
VIL
VIH
DATA
VIL
VIH
F-RP
VIL
tRC
Address
ta(AD)
ta(CE)
tOEH
High-Z
tPS
tCLZ
ta(OE)
tOLZ
tDF(CE)
tDF(OE)
tOH
tPHZ
or
High-Z
TEST CONDITIONS
FOR AC CHARACTERISTICS
Input Voltage: VIL=0V, VIH=Flash VCC
Input Rise and Fall Times: ≤5ns
Reference Voltage
at timing measurement: (Flash VCC)/2
Output Load: 1TTL gate + CL(30pF)
DUT
1.3V
1N914
3.3kohm
- 20 -
Revision 1.0
November 2001