K5T6432YT Datasheet, PDF (27/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
MCP MEMORY
AC Waveforms for Erase Operation with BGO(WE Control)
Address ^VIH
A21 ~ A0 _VIL
VIH
F-CE
VIL
VIH
OE
VIL
VIH
WE
VIL
VIH
DATA
VIL
Bank Address
Vaild
tWC
Program in one bank
tAS
Read Status Register
Address Vaild
tAH
tCS
tCH
tWP
tWPH
tOEH
High-Z
20H
tDS
tWHRL
DOH
tDH
SR
Busy
Change Bank Address
Read Array in another bank
Address Vaild
Address Vaild
ta(CE)
ta(OE)
DOUT
DOUT
AC Waveforms for Erase Operation with BGO(CE Control)
Address VIH
A21 ~ A0
VIL
VIH
F-CE
VIL
Bank Address
Vaild
tWC
Program in one bank
tAS
Read Status Register
Address Vaild
tAH
OE
WE
DATA
VIH
VIL
tWS
VIH
VIL
VIH High-Z
VIL
tCEP
tWH
tOEH
20H
tDS
tEHRL
DOH
tDH
SR
Busy
Change Bank Address
Read Array in another bank
Address Vaild
Address Vaild
ta(CE)
ta(OE)
DOUT
DOUT
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Revision 1.0
November 2001