K5T6432YT Datasheet, PDF (32/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
Operation Status (WP=VIL)
MCP MEMORY
F3H
Seq. Page Read
Read Array
(From the other Bank)
Change Bank
Address
Single Data Load
BA
*
Single Data Load ^ACH Single Data Load
BA
*
Single Data Load
to Page Bufer Setup
to Page Bufer Setup
to Page Bufer Setup
to Page Bufer Setup
Read/Standby State ^FFH
(Sequential Page Read Mode)
Read/Standby State
(Read Array Mode)
Read
Status Register
70H
70H
60H
Read
90H
FFH (Read Array)
Device Identifier _90H
F3H (Seq. Page)
7BH
Single Data Load
to Page Bufer Setup
Other
FFH (Read Array)
F3H (Seq. Page)
Read Array
D0H
WD D0H
Setup State 55H
74H
F1H
0EH
41H
40H
20H
A7H
50H
Clear
Status Register
Clear Page Bufer
Setup
Single Data Load
to Page Bufer Setup
Flash Page Burrer
Setup
Page Buffer to Flash
Setup
Page Program
Setup
Word Program
Setup
Block Erase
Setup
Erase All Unlocked
Blocks Setup
Ready
Wdi
D0H i=0-127
WD
Program &
Verift
Read
Status Register
B0H
D0H
Internal State
D0H
D0H
B0H
D0H
Erase &
Verift
Read
Status Register
Change Bank
Address
Suspend
Read State
with BGO
Read Array
State
Change Bank
Address
(From the other Bank)
Seq. Page Read
Read
Status Register
70H
FFH (Read Array)
F3H (Seq. Page)
Read Array
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Revision 1.0
November 2001