K5T6432YT Datasheet, PDF (17/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
MCP MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Rating
Unit
F-Vcc Voltage
F-Vcc
With Respect to Vss
-0.2 to +4.6
V
All input or Output Voltage¹⁾
VI1
-0.6 to +4.6
Ambient Temperature
Ta
-40 to +85
Temperature under Bias
Tbs
-50 to +95
°C
Storage Temperature
Tstg
-65 to +125
Outputs Short Circuit Current
Iout
100 (Max.)
mA
Notes : 1. Minimum DC voltage is -0.5V on input / output pins. During transitions, the level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input / output pins is F-Vcc+0.5V which, during transitions, may overshoot to F-Vcc+1.5V for periods <20ns.
DC CHARACTERISTICS
Parameter
Input Leakage Current
Output Leackage Current
Vcc Standby Current
Vcc Deep Power Down Current
Vcc Read Current for Word
Vcc Sequential Page Read Current
Vcc Write Current for Word
Vcc Program Current
Vcc Erase Current
Vcc Suspend Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Low F-Vcc Lock Out Voltage²⁾
Sym-
bol
ILI
ILO
ISB1
ISB2
ISB3
ISB4
ICC1
ICC1P
ICC2
ICC3
ICC4
ICC5
VIL
VIH
VOL
VOH1
Test Conditions
0V<VIN<F-Vcc
0V<VOUT<F-Vcc
F-Vcc=3.3V, VIN=VIL/VIH,
F-CE=F-RP=F-WP=VIH
F-Vcc=3.3V, VIN=Vss/F-Vcc,
F-CE=F-RP=F-WP=F-Vcc±0.3V
F-Vcc=3.3V, VIN/VIH, F-RP=VIL
F-Vcc=3.3V, VIN=Vss or F-Vcc,
F-RP=F-Vss±0.3V
F-Vcc=3.3V, VIN=VIL/VIH,
F-RP=WE=VIH,
F-CE=OE=VIL, Iout=0mA
5MHz
1MHz
5MHz
F-Vcc=3.3V, VIN=VIL/VIH,
F-RP=OE=VIH, F-CE=WE=VIL
F-Vcc=3.3V, VIN=VIL/VIH,
F-CE=F-RP=F-WP=VIH
F-Vcc=3.3V, VIN=VIL/VIH,
F-CE=F-RP=F-WP=VIH
F-Vcc=3.3V, VIN=VIL/VIH,
F-CE=F-RP=F-WP=VIH
IOL=4.0mA
IOH=-2.0mA
VOH2
VLKO
IOL=4-100µA
Min
Typ¹⁾
50
0.1
5
0.1
20
4
5
-0.5
2.0
0.85x
F-Vcc
F-Vcc
-0.4
1.5
Max
±1.0
±1.0
200
5
15
5
30
8
10
15
35
35
200
0.8
F-Vcc
+0.5
0.45
2.2
Unit
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
Notes : All currents are in RMS unless otherwise noted
1. Typical values at F-Vcc=3.0V, Ta=25°C.
2. To protect initiation of write cycle during F-Vcc power up / down, a write cycle is locked out for F-Vcc less than VLKO, Write State Machine
is in Busy state, if F-Vcc is less than VLKO, the alteration of memory contents may occur.
- 17 -
Revision 1.0
November 2001