K5T6432YT Datasheet, PDF (23/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
AC Waveforms for Page Program Operation(WE Control)
MCP MEMORY
Address VIH
A21 ~ A7
VIL
VIH
A6 ~ A0
VIL
VIH
F-CE
VIL
VIH
OE
VIL
VIH
WE
VIL
VIH
DATA
VIL
VIH
F-RP
VIL
VIH
F-WP
VIL
Bank Address
Vaild
Address Vaild ^{The Other Bank}
Address Vaild
Address Vaild
00H
Vaild
01H-7EH
7FH
tWC
tAS
tAH
Bank Address Vaild
Read Status Register Write Read Register
ta(CE)
tCS
tCH
tWP tWPH
tOEH
ta(CE)
tGHWL
ta(OE)
tDH
High-Z
41H
DIN
DOU
DIN
tDS
tBLS
tOEH
tWHRL
DIN
SR
Busy
tDAP
ta(OE)
SR
Ready
tBLH
FFH
AC Waveforms for Page Program Operation(CE Control)
Address VIH
A21 ~ A7
VIL
VIH
A6 ~ A0
VIL
VIH
F-CE
VIL
VIH
OE
VIL
VIH
WE
VIL
VIH
DATA
VIL
VIH
F-RP
VIL
VIH
F-WP
VIL
Bank Address
Vaild
Address Vaild ^{The Other Bank}
Address Vaild
Address Vaild
00H
Vaild
01H-7EH
7FH
tWC
tAS
tAH
Bank Address Vaild
Read Status Register Write Read Register
ta(CE)
tWS
tWH
ta(CE)
tCEPH
tCEP
tOEH
tGHWL
ta(OE)
tDH
High-Z
41H
DIN
DOU
DIN
tPS
tDS
tBLS
tOEH
tEHRL
DIN
SR
Busy
tDAP
ta(OE)
SR
Ready
tBLH
FFH
- 23 -
Revision 1.0
November 2001