K5T6432YT Datasheet, PDF (31/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
Operation Status (WP=VIH)
F3H
Read/Standby State ^FFH
(Sequential Page Read Mode)
Clear
Status Register
Read/Standby State
(Read Array Mode)
Read
Status Register
50H
70H
70H
Read
90H
FFH (Read Array)
Device Identifier _90H
F3H (Seq. Page)
Seq. Page Read
Read Array
(From the other Bank)
Change Bank
Address
FFH (Read Array)
F3H (Seq. Page)
Read Array
D0H WD D0H
MCP MEMORY
Setup State 55H
74H
F1H
0EH
41H
Clear Page Bufer
Setup
Single Data Load
to Page Bufer Setup
Flash Page Burrer
Setup
Page Buffer to Flash
Setup
Page Program
Setup
40H
20H
Word Program
Setup
A7H
Block Erase
Setup
Erase All Unlocked
Blocks Setup
Wdi
Other D0H I=0-127
WD
Ready
Program &
Verift
Read
Status Register
B0H
D0H
Internal State
D0H
D0H
B0H
D0H
Erase &
Verift
Read
Status Register
Other
Change Bank
Address
Suspend
Read State
with BGO
Read Array
State
Change Bank
Address
(From the other Bank)
Seq. Page Read
Read
Status Register
70H
FFH (Read Array)
F3H (Seq. Page)
Read Array
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Revision 1.0
November 2001