K5T6432YT Datasheet, PDF (35/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
MCP MEMORY
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ¹⁾ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO CS=VIH, ZZ=VIH, OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
ICC1 ^{Cycle time=1µs, 100% duty, IIO=0mA, CS≤0.2V,}
Average operating current
ZZ≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
-
2
5 mA
ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS=VIL, ZZ=VIH, VIN=VIL or VIH
-
18 25 mA
Output low voltage
VOL IOL=2.1mA
-
-
0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4
-
-
V
Standby Current(CMOS) ISB1 CS≥Vcc-0.2V, ZZ≥Vcc-0.2V, Other inputs=Vss to Vcc
- 120 150 µA
Deep Power Down
ISBD ZZ≤0.2V, Other inputs=Vss to Vcc
-
5
20 µA
1. Typical values are tested at VCC=3.0V, TA=25°C and not guaranteed.
AC OPERATING CONDITIONS
Dout
TEST CONDITIONS(Test Load and Test Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Z0=50Ω
Input and output reference voltage: 1.5V
Output load(See right): CL=50pF
* Include scope and jig capacitance
RL=50Ω
50pF*
VL=1.5V
AC CHARACTERISTICS(Vcc=2.7~3.3V, TA=-25 to 85°C)
Parameter List
Symbol
Speed Bins
100ns¹⁾
100ns²⁾
Min
Max
Min
Max
Read Cycle Time
Address Access Time
Chip Select to Output
tRC
100
-
100
-
tAA
-
100
-
100
tCO
-
100
-
100
Read
Output Enable to Valid Output
UB, LB Access Time
Chip Select to Low-Z Output
UB, LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB, LB Disable to High-Z Output
tOE
-
50
-
50
tBA
-
100
-
100
tLZ
10
-
10
-
tBLZ
10
-
10
-
tOLZ
5
-
5
-
tHZ
0
25
0
25
tBHZ
0
25
0
25
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
tOHZ
tOH
tWC
tCW
tAS
tAW
0
25
0
25
5
-
5
-
100
-
110
-
80
-
100
-
0
-
0
-
80
-
100
-
Write
UB, LB Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
tBW
tWP
tWR
tWHZ
tDW
tDH
tOW
80
-
100
-
70
-
100
-
0
-
0
-
0
30
0
30
40
-
40
-
0
-
0
-
5
-
5
-
1. The characteristics which is restricted for continuous write operation over 20 times, please refer to technical note.
2. The characteristics for continuous write operation.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
- 35 -
Revision 1.0
November 2001