K5T6432YT Datasheet, PDF (33/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
UtRAM Part
MCP MEMORY
Clk gen.
Precharge circuit.
Vcc
Vss
Row
Addresses
Row
select
Memory array
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
CS
ZZ
OE
Control Logic
WE
UB
LB
FUNCTIONAL BLOCK DIAGRAM (32Mbit UtRAM)
FUNCTIONAL DESCRIPTION
CS
ZZ
OE
WE
LB
H
H
X¹⁾
X¹⁾
X¹⁾
X¹⁾
L
X¹⁾
X¹⁾
X¹⁾
L
H
X¹⁾
X¹⁾
H
L
H
H
H
L
L
H
H
H
X¹⁾
L
H
L
H
L
L
H
L
H
H
L
H
L
H
L
L
H
X¹⁾
L
L
L
H
X¹⁾
L
H
L
H
X¹⁾
L
L
1. X means don’t care.(Must be low or high state)
UB
I/O1~8 I/O9~16
Mode
Power
X¹⁾
High-Z High-Z
Deselected
Standby
X¹⁾
High-Z High-Z
Deselected
Deep Power Down
H
High-Z High-Z
Deselected
Standby
X¹⁾
High-Z High-Z
Output Disabled
Active
L
High-Z High-Z
Output Disabled
Active
H
Dout High-Z
Lower Byte Read
Active
L
High-Z Dout
Upper Byte Read
Active
L
Dout Dout
Word Read
Active
H
Din High-Z
Lower Byte Write
Active
L
High-Z Din
Upper Byte Write
Active
L
Din
Din
Word Write
Active
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Revision 1.0
November 2001