K5T6432YT Datasheet, PDF (34/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
MCP MEMORY
ABSOLUTE MAXIMUM RATINGS¹⁾
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCC+0.3V
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 3.6V
V
Power Dissipation
PD
1.0
W
Storage temperature
Operating Temperature
TSTG
TA
-65 to 150
°C
-25 to 85
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions longer than 1seconds may affect reliability.
STANDBY MODE STATE MACHINES
Power On
CS=VIH
CS=VIL, UB or/and LB=VIL
ZZ=VIH
Standby
Mode
Initial State
(Wait 200µs)
Active
Read Operation Twice
CS=VIH, ZZ=VIH
CS=VIH
ZZ=VIH
ZZ=VIL
ZZ=VIL
Deep Power
Down Mode
STANDBY MODE CHARACTERISTIC
Power Mode
Standby
Deep Power Down
Memory Cell Data
Valid
Invaild
Standby Current(µA)
150
20
Wait Time(µs)
0
200
RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-25 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
2.7
0
2.2
-0.2³⁾
CAPACITANCE¹⁾(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Typ
Max
Unit
3.0
3.3
V
0
0
V
-
Vcc+0.2²⁾
V
-
0.6
V
Min
Max
Unit
-
8
pF
-
10
pF
- 34 -
Revision 1.0
November 2001