K5T6432YT Datasheet, PDF (26/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
MCP MEMORY
AC Waveforms for Page Program Operatio with BGO(WE Control)
Address ^VIH
A21 ~ A7 _VIL
Bank Address
Vaild
Program in one bank
Address Vaild
Change Bank Address
Read Array in another bank
Address Vaild Address Vaild
VIH
A6 ~ A0
VIL
VIH
F-CE
VIL
VIH
OE
VIL
VIH
WE
VIL
VIH
DATA
VIL
00H
Valid
01H-7EH
tWC
tAS
tAH
tCS
tCH
tWP tWPH
tOEH
ta(CE)
tGHWL
ta(OE)
High-Z
41H
tDH
DIN
DOU
DIN
tDS
7FH
Address Vaild Address Vaild
ta(CE)
tOEH
ta(OE)
tWHRL
DIN
SR
Busy
DOUT
DOUT
AC Waveforms for Page Program Operatio with BGO(CE Control)
Address ^VIH
A21 ~ A7 _VIL
Bank Address
Vaild
Program in one bank
Address Vaild
Change Bank Address
Read Array in another bank
Address Vaild Address Vaild
A6 ~ A0
F-CE
OE
WE
DATA
VIH
00H
Valid
01H-7EH
VIL
tWC
tAS
tAH
VIH
VIL
tWS
tWH
VIH
ta(CE)
VIL
tCEP tCEPH
VIH
tGHEL
ta(OE)
VIL
VIH _High-Z
VIL
41H
tDH
DIN
DOUT
DIN
tDS
7FH
tOEH
tEHRL
DIN
tEHRL
SR
Busy
ta(CE)
ta(OE)
DOUT
DOUT
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Revision 1.0
November 2001