K5T6432YT Datasheet, PDF (18/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
AC CHARACTERISTICS
Read Only Mode
Parameter
Symbol
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Sequential Page Access Time (After 2nd Cycle)
Sequential Page Setup Time
Sequential Page Read F-CE "H" Time
Maximum Valid Time of Sequential Page Read
Chip Enable to Output in Low-Z
Chip Enable High to Output in High-Z
Output Enablr to Output in Low-Z
Output Enable to High to Output in High-Z
F-RP Low to Output High-Z
Output Hold from F-CE , OE and Address
OE hold from WE High
F-RP Recovery to CE Low
tRC
ta(AD)
ta(CE)
ta(OE)
ta(PAD)
tASPR
tCEHRR
tRPCRR
tCLZ
tDF(CE)
tOLZ
tDF(OE)
tPHZ
tOH
tOEH
tPS
tAVAV
tAVQV
tELQV
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
tPLQZ
tOH
tWHGL
tPHEL
Notes : 1. Timing measurements are made under AC waveforms for read operation.
MCP MEMORY
Vcc=2.7V~3.3V
Unit
Min
Typ
Max
85
ns
85
ns
85
ns
30
ns
45
ns
-20
ns
15
ns
20
ns
0
ns
25
ns
0
ns
25
ns
150
ns
0
ns
10
ns
150
ns
Read / Write Mode (WE Control)
Parameter
Symbol
Wrie Cycle Time
tWC
Address Setup Time
tAS
Address Hold Time
tAH
Data Setup time
tDS
Data Hold time
tDH
OE Holf from WE High
tOEH
Chip Enable Setup Time
tCS
Chip Enable Hold Time
tCH
Write Pulse Width
tWP
Write Pulse Width High
tWPH
OE Hold to WE Low
tGHWL
Block Lock Setup to Write Enable High
tBLS
Block Lock Hold from Valid SRD
tBLH
Duration of Auto Program Operation (Word Mode) tDAP
Duration of Auto Program Operation (Page Mode) tDAP
Duration of Auto Block Erase Operation
tDAE
Delay Time to Begin Internal Operation
tWHRL
F-RP Recovery to F-CE Low
tPS
tAVAV
tAVWH
tWHAX
tDVWH
tWHDX
tWHGL
tELWL
tWHEH
tWLWH
tWHWL
tGHWL
tPHHWH
tQVPH
tWHRH1
tWHRH1
tWHRH2
tWHRL
tPHWL
Vcc=2.7V~3.3V
Min
Typ
Max
85
35
0
35
0
10
0
0
35
30
0
85
0
30
300
4
80
150
600
85
150
Notes : 1. Read timing parameters during command write operations mode are the same as during read only operation mode.
2. Typical values at F-Vcc=3.0V and Ta=25°C.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
ms
ns
ns
- 18 -
Revision 1.0
November 2001