K5T6432YT Datasheet, PDF (24/40 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

K5T6432YT(B)M
AC Waveforms for Erase Operation(WE Control)
MCP MEMORY
Address VIH
A21 ~ A0
VIL
VIH
F-CE
VIL
VIH
OE
VIL
VIH
WE
VIL
VIH
DATA
VIL
VIH
F-RP
VIL
VIH
F-WP
VIL
Bank Address
Vaild
tWC
Address Vaild
tAS
tAH
tCS
tCH
tWP
tWPH
tOEH
High-Z
tPS
20H
tDS
tWHRL
DOH
tDH
tBLS
AC Waveforms for Erase Operation(CE Control)
Erase
Bank Address
Read Status Register Write Read Register
ta(CE)
ta(OE)
SR
Busy
tDAE
SR
Ready
FFH
tBLH
Address VIH
A21 ~ A0
VIL
VIH
F-CE
VIL
Bank Address
Vaild
tWC
Address Vaild
tAS
tAH
OE
WE
DATA
F-RP
F-WP
VIH
VIL
tWS
VIH
VIL
VIH High-Z
VIL
tPS
VIH
VIL
VIH
VIL
tCEP
tWH
tOEH
20H
tDS
tWHRL
DOH
tDH
tBLS
Erase
Bank Address
Read Status Register Write Read Register
ta(CE)
ta(OE)
SR
Busy
tDAE
SR
Ready
FFH
tBLH
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Revision 1.0
November 2001