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K4F661612D Datasheet, PDF (34/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
Industrial Temperature
K4F661612D, K4F641612D
CAS - BEFORE - RAS SELF REFRESH CYCLE
N O T E : O E , A = D o n ′t care
V IH -
RAS
V IL -
V IH -
UCAS
V IL -
V IH -
LCAS
V IL -
tR P
tRPC
tC P
tCSR
tC P
tCSR
tRASS
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
VIH -
W
V IL -
tOFF
tW R P
tWRH
OPEN
OPEN
TEST MODE IN CYCLE
N O T E : O E , A = D o n ′t care
V IH -
RAS
V IL -
V IH -
UCAS
V IL -
V IH -
LCAS
V IL -
tR P
tCRP
tC P
tC S R
tC P
tC S R
tRAS
tRC
tCHR
tCHR
VIH -
W
V IL -
DQ0 ~ DQ15
VOH -
VOL -
tOFF
tWTS
tWTH
OPEN
CMOS DRAM
tR P S
tR P C
tC H S
tC H S
tR P
tRPC
D o n ′t care
Undefined