K4F661612D Datasheet, PDF (26/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

Industrial Temperature
K4F661612D, K4F641612D
FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : D OUT = O P E N
CMOS DRAM
V IH -
RAS
V IL -
tRASP
¡ó
tR H C P
V IH -
UCAS
V IL -
V IH -
LCAS
V IL -
V IH -
A
V IL -
tC R P
tC R P
tRCD
tPC
tC A S
tASR
tRAD
tR A H
tC S H
tASC
tC A H
ROW
ADDR
COLUMN
ADDRESS
¡ó
tPC
tCP
tC P
tC A S
tRSH
tCAS
¡ó
tR A L
tA S C
tCAH
tASC t CAH
¡ó
COLUMN
ADDRESS
¡ó
COLUMN
ADDRESS
V IH -
W
V IL -
tWCS tWCH
tWP
tWCS
tW C H
tW P
¡ó
tW C S
tW C H
tW P
VIH -
OE
V IL -
DQ0 ~ DQ7
V IH -
V IL -
DQ8 ~ DQ15
V IH -
V IL -
tDS
tDH
VALID
DATA-IN
¡ó
¡ó
tDS
t DH
VALID
DATA-IN
tDS
tDH
¡ó
VALID
DATA-IN
¡ó
tRP
tRPC
D o n ′t c a r e
Undefined