K4F661612D Datasheet, PDF(17/35 Page) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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K4F661612D Datasheet, PDF (17/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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Industrial Temperature

K4F661612D, K4F641612D

LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )

NOTE : D OUT = O P E N

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

V IH -

LCAS

V IL -

VIH -

V IL -

V IH -

V IL -

V IH -

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

V IH -

V IL -

tCRP

tR A S

tRC

tCRP

tRCD

t CSH

tRSH

tCAS

tRAD

tASR

tR A H

ROW

ADDRESS

tA S C

tC A H

COLUMN

ADDRESS

tRAL

tCWL

tRWL

tWP

tOED

tO E H

tD S

tDH

DATA-IN

CMOS DRAM

tR P

tRPC

tCRP

D o nâ²t care

Undefined

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