English
Language : 

K4F661612D Datasheet, PDF (10/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
Industrial Temperature
K4F661612D, K4F641612D
WORD READ CYCLE
CMOS DRAM
VIH -
RAS
V IL -
V IH -
UCAS
V IL -
V IH -
LCAS
V IL -
V IH -
A
V IL -
V IH -
W
V IL -
VIH -
OE
V IL -
DQ0 ~ DQ7
V OH -
V OL -
DQ8 ~ DQ15
V OH -
V OL -
tRC
tR A S
tCRP
tCRP
tRCD
tRCD
tC S H
tC S H
tR S H
tCAS
tR S H
tC A S
tASR
tR A D
tRAH
tA S C
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tR A L
tR C S
tR P
tCRP
tC R P
tRRH
tRCH
OPEN
OPEN
tA A
tR A C
tOEA
tCAC
tCLZ
tR A C
tCAC
tCLZ
tOEZ
DATA-OUT
tO E Z
DATA-OUT
tOFF
tOFF
D o n′t care
Undefined