K4F661612D Datasheet, PDF (19/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

Industrial Temperature
K4F661612D, K4F641612D
WORD READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
V IL -
V IH -
UCAS
V IL -
VIH -
LCAS
V IL -
VIH -
A
V IL -
V IH -
W
V IL -
V IH -
OE
V IL -
DQ0 ~ DQ7
V I/OH -
VI/OL -
DQ8 ~ DQ15
V I/OH -
V I/OL -
tR A S
tR W C
tR P
tC R P
tRCD
tR S H
tCAS
tC R P
tRCD
tRAD
tASR
tRAH
ROW
ADDR
tASC
tC A H
COLUMN
ADDRESS
tR S H
tCAS
tCSH
tA W D
tC W D
tR W D
tO E A
tR W L
tCWL
tW P
tCLZ
tC A C
tAA
tRAC
t CLZ
tC A C
tAA
tRAC
tOED
tO E Z
VALID
DATA-OUT
tOED
tO E Z
VALID
DATA-OUT
tDS
t DH
VALID
DATA-IN
tD S
t DH
VALID
DATA-IN
D o n ′t c a r e
Undefined