K4F661612D Datasheet, PDF(11/35 Page) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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K4F661612D Datasheet, PDF (11/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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Industrial Temperature

K4F661612D, K4F641612D

LOWER BYTE READ CYCLE

N O T E : D IN = O P E N

CMOS DRAM

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

VIH -

LCAS

V IL -

VIH -

VIL -

V IH -

V IL -

VIH -

V IL -

DQ0 ~ DQ7

V OH -

V OL -

DQ8 ~ DQ15

VOH -

V OL -

tR C

tRAS

tRP

tC R P

tRPC

tCRP

tRCD

tASR

tR A D

tRAH

tASC

ROW

ADDRESS

t CSH

tR S H

tCAS

tC A H

COLUMN

ADDRESS

tR A L

tRCS

tR A C

OPEN

tA A

tOEA

t CAC

tCLZ

tR R H

tRCH

tOFF

tOEZ

DATA-OUT

OPEN

D o nâ²t care

Undefined

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